GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification
نویسندگان
چکیده
منابع مشابه
Development of Diamond Schottky Barrier Diode
Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...
متن کاملAn Heterojunction Schottky Barrier Diode with RTD Emitter
The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...
متن کاملHydrogen sensors based on Pt-AlGaN/AlN/GaN schottky diode
Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...
متن کاملAlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation
AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...
متن کاملSchottky barrier diode parameters of Ag/MgPc/p-Si structure
An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2014
ISSN: 2168-6734
DOI: 10.1109/jeds.2014.2346395